? semiconductor components industries, llc, 2006 june, 2006 ? rev. 2 1 publication order number: njl3281d/d njl3281d (npn) njl1302d (pnp) complementary thermaltrak transistors the thermaltrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. they can also be used in other applications as transistor die protection devices. features ? thermally matched bias diode ? instant thermal bias tracking ? absolute thermal integrity ? high safe operating area ? pb?free packages are available* benefits ? eliminates thermal equilibrium lag time and bias trimming ? superior sound quality through improved dynamic temperature response ? significantly improved bias stability ? simplified assembly ? reduced labor costs ? reduced component count ? high reliability applications ? high?end consumer audio products ? home amplifiers ? home receivers ? professional audio amplifiers ? theater and stadium sound systems ? public address systems (pas) *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?264, 5 lead case 340aa style 1 http://onsemi.com bipolar power transistors 15 amp, 260 volt, 200 watt marking diagram njlxxxxd = device code xxxx = 3281 or 1302 g = pb?free package a = assembly location yy = year ww = work week njlxxxxdg ayyww thermal trak schematic device package shipping ordering information njl3281d to?264 25 units / rail 25 units / rail 25 units / rail to?264 (pb?free) 25 units / rail NJL3281DG njl1302d njl1302dg to?264 (pb?free) to?264
njl3281d (npn) njl1302d (pnp) http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 260 vdc collector?base voltage v cbo 260 vdc emitter?base voltage v ebo 5 vdc collector?emitter voltage ? 1.5 v v cex 260 vdc collector current ? continuous ? peak (note 1) i c 15 25 adc base current ? continuous i b 1.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c dc blocking voltage v r 200 v average rectified forward current i f(av) 1.0 a thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 0.625 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. attributes characteristic value esd protection human body model machine model >8000 v > 400 v flammability rating ul 94 v?0 @ 0.125 in
njl3281d (npn) njl1302d (pnp) http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 260 ? vdc collector cutoff current (v cb = 260 vdc, i e = 0) i cbo ? 50 adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo ? 5 adc on characteristics dc current gain (i c = 500 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) h fe 75 75 75 75 45 150 150 150 150 ? collector?emitter saturation voltage (i c = 10 adc, i b = 1 adc) v ce(sat) ? 3 vdc dynamic characteristics current?gain ? bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t 30 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? 600 pf maximum instantaneous forward voltage (note 2) (i f = 1.0 a, t j = 25 c) (i f = 1.0 a, t j = 150 c) v f 1.1 0.93 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 150 c) i r 10 100 a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ s) t rr 100 ns 2. diode pulse test: pulse width = 300 s, duty cycle 2.0%.
njl3281d (npn) njl1302d (pnp) http://onsemi.com 4 i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp njl1302d f, current bandwidth product (mhz) t npn njl3281d i c , collector current (amps) 0.1 1.0 10 50 40 30 20 10 0 60 40 30 0 10 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 20 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 50 figure 3. dc current gain, v ce = 5 v figure 4. dc current gain, v ce = 5 v i c , collector current (amps) h fe , dc current gain i c , collector current (amps) h fe , dc current gain pnp njl1302d npn njl3281d 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c ?25 c v ce = 5 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c ?25 c v ce = 5 v typical characteristics v ce , collector?emitter voltage (volts) figure 5. typical output characteristics i c , collector current (a) v ce , collector?emitter voltage (volts) figure 6. typical output characteristics i c , collector current (a) pnp njl1302d npn njl3281d 45 25 20 15 10 5.0 0 5.0 010152025 45 25 20 15 10 0 5.0 010152025 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 30 40 35 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 40 35 30
njl3281d (npn) njl1302d (pnp) http://onsemi.com 5 typical characteristics figure 7. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 8. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 9. typical base?emitter voltage i c , collector current (amps) v be(on) , base?emitter voltage (volts) figure 10. typical base?emitter voltage i c , collector current (amps) v be(on) , base?emitter voltage (volts) pnp njl1302d npn njl3281d pnp njl1302d npn njl3281d 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0 100 10 1.0 0.1 0.5 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed)
njl3281d (npn) njl1302d (pnp) http://onsemi.com 6 figure 11. active region safe operating area v ce , collector?emitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability o f a transistor; average junction temperature and secondar y breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliabl e operation; i.e., the transistor must not be subjected to greate r dissipation than the curves indicate. the data of figure 11 is based on t j(pk) = 150 c; t c i s variable depending on conditions. at high case temperature s, thermal limitations will reduce the power than can be handle d to values less than the limitations imposed by secon d breakdown. typical characteristics 100 10 1.0 0.1 100 10 1.0 1000 10 ms 50 ms 250 ms 1 sec figure 12. njl1302d typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 13. njl3281d typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob pnp njl1302d npn njl3281d 1 0.01 80 60 40 20 200 v r , reverse voltage (volts) v f , voltage (volts) figure 14. typical reverse current figure 15. typical forward voltage 0.0001 0.1 10 0 i r , reverse current ( a) 0.7 0.6 0.5 0.4 0.8 0.001 10 0.3 1 0.1 1 0.9 i f , forward current (a) t j = ?25 c t j = 100 c t j = 25 c ?25 c 100 c 25 c 100 120 1 .1 140 160 180 0.001 0.01
njl3281d (npn) njl1302d (pnp) http://onsemi.com 7 package dimensions to?264, 5 lead case 340aa?01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g 5 pl 5 pl 0.25 (0.010) m tb s 12 3 ?b? q ?t? 45 m y dim min nom max millimeters a 25.857 25.984 26.111 b 19.761 19.888 20.015 c 4.928 5.055 5.182 d 1.219 bsc e 2.032 2.108 2.184 f g 3.81 bsc h 2.667 2.718 2.769 j 0.584 bsc k 20.422 20.549 20.676 l 11.28 ref m n 4.57 ref p 2.259 2.386 2.513 q 3.480 bsc r 2.54 ref s u 6.17 ref w min nom max inches 1.018 1.023 1.028 0.778 0.783 0.788 0.194 0.199 0.204 0.0480 bsc 0.0800 0.0830 0.0860 0.0780 bsc 0.150 bsc 0.1050 0.1070 0.1090 0.0230 bsc 0.804 0.809 0.814 0.444 ref 0.180 ref 0.0889 0.0939 0.0989 0.1370 bsc 0.100 ref 0.243 ref 1.981 bsc 0 ??? ??? 7 0 7 0 ??? ??? 8 0 8 0 ??? ??? 6 0 6 s w s w y 2.388 bsc 0.0940 bsc style 1: pin 1. base 2. emitter 3. collector 4. anode 5. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 njl3281d/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative thermaltrak is a trademark of semiconductor components industries, llc (scillc).
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